NVD5C454NLT4G دیتاشیت

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RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVD5C454NLT4G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.1W;56W
Total Gate Charge (Qg@Vgs): 43nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 2600pF@25V
Continuous Drain Current (Id): 20A;84A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@70uA
Reverse Transfer Capacitance (Crss@Vds): 43pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@10V,40A
Package: TO-252
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NVD5C4
detail: N-Channel 40V 20A (Ta), 84A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount DPAK