FGD5T120SH دیتاشیت

FGD5T120SH

مشخصات دیتاشیت

نام دیتاشیت FGD5T120SH
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FGD5T120SH

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مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGD5T120SH
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 69W
  • Turn?on Delay Time (Td(on)): 4.8ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.247mJ
  • Total Gate Charge (Qg@Ic,Vge): 6.7nC
  • Turn?off Delay Time (Td(off)): 24.8ns
  • Pulsed Collector Current (Icm): 12.5A
  • Turn?off Switching Loss (Eoff): 0.094mJ
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.6V@15V,5A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 12.5A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
  • Power - Max: 69W
  • Switching Energy: 247µJ (on), 94µJ (off)
  • Input Type: Standard
  • Gate Charge: 6.7nC
  • Td (on/off) @ 25°C: 4.8ns/24.8ns
  • Test Condition: 600V, 5A, 30Ohm, 15V
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: FGD5
  • detail: IGBT Trench Field Stop 1200V 10A 69W Surface Mount DPAK

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