NTMD4840NR2G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTMD4840NR2G
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حجم فایل
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97.242
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTMD4840NR2G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
680mW
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Total Gate Charge (Qg@Vgs):
9.5nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
520pF@15V
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Continuous Drain Current (Id):
4.5A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
24mΩ@10V,6.9A
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
4.5A
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Rds On (Max) @ Id, Vgs:
24mOhm @ 6.9A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
9.5nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
520pF @ 15V
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Power - Max:
680mW
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
NTMD48
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detail:
Mosfet Array 2 N-Channel (Dual) 30V 4.5A 680mW Surface Mount 8-SOIC
