NRVBD640VCTT4G دیتاشیت

NRVBD640VCTT4G

مشخصات دیتاشیت

نام دیتاشیت NRVBD640VCTT4G
حجم فایل 67.2 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت NRVBD640VCTT4G

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Diodes/Schottky Barrier Diodes (SBD)
  • Datasheet: onsemi NRVBD640VCTT4G
  • Diode Configuration: Dual Common Cathode
  • Reverse Voltage (Vr): 40V
  • Forward Voltage (Vf@If): 900mV@6A
  • Reverse Leakage Current (Ir): 100uA@40V
  • Average Rectified Current (Io): 3A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: SWITCHMODE™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NRVBD64
  • detail: Diode Array 1 Pair Common Cathode Schottky 40V 3A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63