NTD5862NT4G دیتاشیت

NTD5862NT4G

مشخصات دیتاشیت

نام دیتاشیت NTD5862NT4G
حجم فایل 89.449 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت NTD5862NT4G

دانلود دیتاشیت

سایر مستندات

NTD5862N 7 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTD5862NT4G
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 115W
  • Total Gate Charge (Qg@Vgs): 82nC@10V
  • Input Capacitance (Ciss@Vds): 6000pF@25V
  • Continuous Drain Current (Id): 98A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@45A,10V
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: NTD58
  • detail: N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK

محصولات مشابه