NTMFS5H419NLT1G دیتاشیت

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مشاهده دیتاشیت NTMFS5H419NLT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMFS5H419NLT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W;89W
Total Gate Charge (Qg@Vgs): 45nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 2900pF@20V
Continuous Drain Current (Id): 29A;155A
Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1mΩ@20A,10V
Package: SO-8FL
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NTMFS5
detail: N-Channel 40V 29A (Ta), 155A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)