FDMC2610 دیتاشیت

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دانلود دیتاشیت FDMC2610	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC2610
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.1W;42W
Total Gate Charge (Qg@Vgs): 18nC@10V
Drain Source Voltage (Vdss): 200V
Input Capacitance (Ciss@Vds): 960pF@100V
Continuous Drain Current (Id): 2.2A;9.5A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@2.2A,10V
Package: WDFN-8
Manufacturer: onsemi
Series: UniFET™
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-MLP (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: FDMC26
detail: N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)