NTMS10P02R2G دیتاشیت

NTMS10P02R2G

مشخصات دیتاشیت

نام دیتاشیت NTMS10P02R2G
حجم فایل 97.559 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTMS10P02R2G

دانلود دیتاشیت

سایر مستندات

NTMS10P02R2 7 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMS10P02R2G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.6W
  • Total Gate Charge (Qg@Vgs): 70nC@4.5V
  • Input Capacitance (Ciss@Vds): 3640pF@16V
  • Continuous Drain Current (Id): 8.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10A,4.5V
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 16V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: NTMS10
  • detail: P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

محصولات مشابه