CSD17309Q3 دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17309Q3
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.8W
Total Gate Charge (Qg@Vgs): 10nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1440pF@15V
Continuous Drain Current (Id): 20A;60A
Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 5.4mΩ@18A,8V
Package: VSON-CLIP-8(3.3x3.3)
Manufacturer: Texas Instruments
Power Dissipation (Max): 2.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
Vgs (Max): +10V, -8V
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Base Part Number: CSD173
Vgs(th) (Max) @ Id: 1.7V @ 250µA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
FET Feature: -
Package / Case: 8-PowerTDFN
Part Status: Active
Series: NexFET™
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 8V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
detail: N-Channel 30V 20A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)