NDB6060L دیتاشیت

NDB6060L

مشخصات دیتاشیت

نام دیتاشیت NDB6060L
حجم فایل 71.49 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت NDB6060L

دانلود دیتاشیت

سایر مستندات

NDP6060, NDB6060 14 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NDB6060L
  • Operating Temperature: -65°C~+175°C@(Tj)
  • Power Dissipation (Pd): 100W
  • Total Gate Charge (Qg@Vgs): 60nC@5V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 2000pF@25V
  • Continuous Drain Current (Id): 48A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,24A
  • Package: TO-263-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: NDB606
  • detail: N-Channel 60V 48A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB)

محصولات مشابه