NVMTS0D6N04CTXG دیتاشیت

NVMTS0D6N04CTXG

مشخصات دیتاشیت

نام دیتاشیت NVMTS0D6N04CTXG
حجم فایل 94.146 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت NVMTS0D6N04CTXG

دانلود دیتاشیت

سایر مستندات

NVMTS0D6N04C 7 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVMTS0D6N04CTXG
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 245W
  • Total Gate Charge (Qg@Vgs): 187nC@10V
  • Drain Source Voltage (Vdss): 40V
  • Input Capacitance (Ciss@Vds): 11.8nF@20V
  • Continuous Drain Current (Id): 533A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 199pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.39mΩ@10V,50A
  • Package: DFNW-8(8.4x8.3)
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
  • Base Part Number: NVMTS0
  • detail: N-Channel 40V 533A (Tc) 5W (Ta) Surface Mount 8-DFNW (8.3x8.4)

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