NTD5C648NLT4G دیتاشیت

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مشاهده دیتاشیت NTD5C648NLT4G-Isee	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTD5C648NLT4G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 4.4W;76W
Total Gate Charge (Qg@Vgs): 17nC@10V
Input Capacitance (Ciss@Vds): 2900pF@30V
Continuous Drain Current (Id): 22A;91A
Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@45A,10V
Package: TO-252
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 30V
FET Feature: -
Power Dissipation (Max): 4.4W (Ta), 76W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NTD5C
detail: N-Channel 60V 22A (Ta), 91A (Tc) 4.4W (Ta), 76W (Tc) Surface Mount DPAK