BUB323ZT4G دیتاشیت

BUB323ZT4G

مشخصات دیتاشیت

نام دیتاشیت BUB323ZT4G
حجم فایل 89.953 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

دانلود دیتاشیت BUB323ZT4G

دانلود دیتاشیت

سایر مستندات

BUB323Z 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Darlington Transistors
  • Datasheet: onsemi BUB323ZT4G
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+175°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 150W
  • Transition frequency (fT): 2MHz
  • DC current gain (hFE@Vce,Ic): 500@4.6V,5A
  • Collector-emitter voltage (Vceo): 350V
  • Collector cut-off current (Icbo@Vcb): 100uA
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.7V@10A,250mA
  • Package: D2PAK
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 250mA, 10A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 5A, 4.6V
  • Power - Max: 150W
  • Frequency - Transition: 2MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Base Part Number: BUB323
  • detail: Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Surface Mount D2PAK

محصولات مشابه