HGT1S20N60C3S9A دیتاشیت

HGT1S20N60C3S9A

مشخصات دیتاشیت

نام دیتاشیت HGT1S20N60C3S9A
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت HGT1S20N60C3S9A

دانلود دیتاشیت

سایر مستندات

HGT(G,P)20N60C3, HGT1S20N60C3S 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi HGT1S20N60C3S9A
  • Package: TO-263AB
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Not For New Designs
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 164W
  • Switching Energy: 295µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 91nC
  • Td (on/off) @ 25°C: 28ns/151ns
  • Test Condition: 480V, 20A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Base Part Number: HGT1S20
  • detail: IGBT 600V 45A 164W Surface Mount TO-263AB

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