NTMTS001N06CTXG دیتاشیت

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مشاهده دیتاشیت NTMTS001N06CTXG	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMTS001N06CTXG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 5W;244W
Total Gate Charge (Qg@Vgs): 113nC@10V
Input Capacitance (Ciss@Vds): 8705pF@30V
Continuous Drain Current (Id): 53.7A;376A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 0.91mΩ@50A,10V
Package: DFNW-8
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 30V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFNW (8.3x8.4)
Package / Case: 8-PowerTDFN
Base Part Number: NTMTS00
detail: N-Channel 60V 53.7A (Ta), 376A (Tc) 5W (Ta), 244W (Tc) Surface Mount 8-DFNW (8.3x8.4)