FDA20N50F دیتاشیت

FDA20N50F

مشخصات دیتاشیت

نام دیتاشیت FDA20N50F
حجم فایل 1569.063 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FDA20N50F

دانلود دیتاشیت

سایر مستندات

مستندات دیگری یافت نشد!

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 388W
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 3390pF@25V
  • Continuous Drain Current (Id): 22A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 260mΩ@10V,11A
  • Package: TO-3P
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 388W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
  • Base Part Number: FDA20
  • detail: N-Channel 500V 22A (Tc) 388W (Tc) Through Hole TO-3PN

محصولات مشابه