NTMFS6B05NT1G دیتاشیت

NTMFS6B05NT1G

مشخصات دیتاشیت

نام دیتاشیت NTMFS6B05NT1G
حجم فایل 88.168 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت NTMFS6B05NT1G

دانلود دیتاشیت

سایر مستندات

NTMFS6B05N 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMFS6B05NT1G
  • Power Dissipation (Pd): 3.3W
  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 16A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,20A
  • Package: DFN-5(5.9x4.9)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 138W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
  • Base Part Number: NTMFS6
  • detail: N-Channel 100V 16A (Ta), 104A (Tc) 3.3W (Ta), 138W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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