FCMT199N60 دیتاشیت

FCMT199N60

مشخصات دیتاشیت

نام دیتاشیت FCMT199N60
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCMT199N60

دانلود دیتاشیت

سایر مستندات

FCMT199N60 11 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCMT199N60
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 208W
  • Total Gate Charge (Qg@Vgs): 74nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 2950pF@100V
  • Continuous Drain Current (Id): 20.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 199mΩ@10V,10A
  • Package: Power-88
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power88
  • Package / Case: 4-PowerTSFN
  • Base Part Number: FCMT199
  • detail: N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88

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