FCMT125N65S3 دیتاشیت

FCMT125N65S3

مشخصات دیتاشیت

نام دیتاشیت FCMT125N65S3
حجم فایل 75.299 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCMT125N65S3

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سایر مستندات

FCMT125N65S3 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCMT125N65S3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 181W
  • Total Gate Charge (Qg@Vgs): 49nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1920pF@400V
  • Continuous Drain Current (Id): 24A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@590uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@12A,10V
  • Package: PQFN-4(8x8)
  • Manufacturer: onsemi
  • Series: SuperFET® III
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 181W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-PQFN (8x8)
  • Package / Case: 4-PowerTSFN
  • Base Part Number: FCMT125
  • detail: N-Channel 650V 24A (Tc) 181W (Tc) Surface Mount 4-PQFN (8x8)

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