دیتاشیت BDX33CG
مشخصات دیتاشیت
| نام دیتاشیت |
BDX33/A/B/C
|
| حجم فایل |
162.731
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi BDX33CG
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
10A
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Power Dissipation (Pd):
70W
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Transition frequency (fT):
-
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DC current gain (hFE@Vce,Ic):
750@3V,3A
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Collector-emitter voltage (Vceo):
100V
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Collector cut-off current (Icbo@Vcb):
500uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
2.5V@3A,6mA
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
10A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
2.5V @ 6mA, 3A
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Current - Collector Cutoff (Max):
500µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
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Power - Max:
70W
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Frequency - Transition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
BDX33
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detail:
Bipolar (BJT) Transistor NPN - Darlington 100V 10A 70W Through Hole TO-220AB
