FQU17P06TU دیتاشیت

FQU17P06TU

مشخصات دیتاشیت

نام دیتاشیت FQU17P06TU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

دانلود دیتاشیت FQU17P06TU

دانلود دیتاشیت

سایر مستندات

FQD17P06, FQU17P06 11 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQU17P06TU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;44W
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 900pF@25V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 135mΩ@10V,225mA
  • Package: TO-251-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU1
  • detail: P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK

محصولات مشابه