NVB072N65S3 دیتاشیت

NVB072N65S3

مشخصات دیتاشیت

نام دیتاشیت NVB072N65S3
حجم فایل 65.652 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NVB072N65S3

دانلود دیتاشیت

سایر مستندات

NVB072N65S3 8 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVB072N65S3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 321W
  • Total Gate Charge (Qg@Vgs): 82nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 3.3nF@400V
  • Continuous Drain Current (Id): 44A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): 14.6pF@400V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 72mΩ@24A,10V
  • Package: D2PAK
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101, SuperFET® III, FRFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK-3 (TO-263-3)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: NVB072
  • detail: N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK-3 (TO-263-3)

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