BDV65BG دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BDV65BG
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حجم فایل
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80.478
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi BDV65BG
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Obsolete
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Transistor Type:
NPN - Darlington
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Current - Collector (Ic) (Max):
10A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 5A
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Current - Collector Cutoff (Max):
1mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
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Power - Max:
125W
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Frequency - Transition:
-
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Operating Temperature:
-65°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-218-3
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Supplier Device Package:
SOT-93
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Base Part Number:
BDV65
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detail:
Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole SOT-93
