NTP2955G دیتاشیت

NTP2955G

مشخصات دیتاشیت

نام دیتاشیت NTP2955G
حجم فایل 81.077 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTP2955G

دانلود دیتاشیت

سایر مستندات

NTP2955 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTP2955G
  • Power Dissipation (Pd): 2.4W
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 2.4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 196mΩ@10V,12A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: NTP295
  • detail: P-Channel 60V 2.4A (Ta) 2.4W (Ta), 62.5W (Tc) Through Hole TO-220AB

محصولات مشابه