MJE700-703,800-803 دیتاشیت

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دانلود دیتاشیت MJE700-703,800-803	دانلود دیتاشیت

MJE800G 7 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi MJE703G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 4A
Power Dissipation (Pd): 40W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 750@3V,2A
Collector-emitter voltage (Vceo): 80V
Collector cut-off current (Icbo@Vcb): 100uA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.8V@2A,40mA
Package: TO-225
Manufacturer: onsemi
Series: -
Packaging: Bulk
Part Status: Obsolete
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: -
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: MJE703
detail: Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-225AA