دیتاشیت FCP11N60N
مشخصات دیتاشیت
| نام دیتاشیت | FCP11N60N, FCPF11N60NT |
|---|---|
| حجم فایل | 780.426 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FCP11N60N, FCPF11N60NT |
FCP11N60N, FCPF11N60NT Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCP11N60N
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 94W
- Total Gate Charge (Qg@Vgs): 27.4nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 1.505nF@100V
- Continuous Drain Current (Id): 10.8A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 3pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 255mΩ@10V,5.4A
- Package: TO-220
- Manufacturer: onsemi
- Series: SupreMOS™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FCP11
- detail: N-Channel 600V 10.8A (Tc) 94W (Tc) Through Hole TO-220-3
