دیتاشیت FQA6N90C-F109
مشخصات دیتاشیت
نام دیتاشیت |
FQA6N90C_F109
|
حجم فایل |
1985.505
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Tube
-
Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
2.3Ohm @ 3A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
198W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-3PN
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Package / Case:
TO-3P-3, SC-65-3
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Base Part Number:
FQA6
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detail:
N-Channel 900V 6A (Tc) 198W (Tc) Through Hole TO-3PN