NGTB20N120IHRWG دیتاشیت

NGTB20N120IHRWG

مشخصات دیتاشیت

نام دیتاشیت NGTB20N120IHRWG
حجم فایل 85.325 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت NGTB20N120IHRWG

دانلود دیتاشیت

سایر مستندات

NGTB20N120IHRWG 10 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTB20N120IHRWG
  • Operating Temperature: -40°C~+175°C@(Tj)
  • Collector Current (Ic): 40A
  • Power Dissipation (Pd): 384W
  • Turn?on Delay Time (Td(on)): -
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): -
  • Total Gate Charge (Qg@Ic,Vge): 225nC
  • Turn?off Delay Time (Td(off)): 235ns
  • Pulsed Collector Current (Icm): 120A
  • Turn?off Switching Loss (Eoff): 0.45mJ
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.45V@15V,20A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
  • Power - Max: 384W
  • Switching Energy: 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Base Part Number: NGTB20
  • detail: IGBT Trench Field Stop 1200V 40A 384W Through Hole TO-247

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