BDX33BG دیتاشیت

BDX33BG

مشخصات دیتاشیت

نام دیتاشیت BDX33BG
حجم فایل 85.106 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت BDX33BG

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Darlington Transistors
  • Datasheet: onsemi BDX33BG
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 70W
  • DC current gain (hFE@Vce,Ic): 750@3A,3V
  • Collector-emitter voltage (Vceo): 80V
  • Collector cut-off current (Icbo@Vcb): 500uA
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@6mA,3A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
  • Power - Max: 70W
  • Frequency - Transition: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Base Part Number: BDX33
  • detail: Bipolar (BJT) Transistor NPN - Darlington 80V 10A 70W Through Hole TO-220AB

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