FQP3N80C دیتاشیت

FQP3N80C

مشخصات دیتاشیت

نام دیتاشیت FQP3N80C
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FQP3N80C

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQP3N80C
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 107W
  • Total Gate Charge (Qg@Vgs): 16.5nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 705pF@25V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8Ω@1.5A,10V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FQP3
  • detail: N-Channel 800V 3A (Tc) 107W (Tc) Through Hole TO-220-3

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