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- دیتاشیت 2SB1216S-E
2SB1216S-E دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | 2SB1216S-E |
|---|---|
| حجم فایل | 58.995 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت 2SB1216S-E |
دانلود دیتاشیت |
|---|
سایر مستندات
2SB1216/2SD1816 7 pages
2SB1216S-E 7 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2SB1216S-E
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 20W
- Transition Frequency (fT): 180MHz
- DC Current Gain (hFE@Ic,Vce): 140@500mA,5V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@2A,200mA
- Package: TO-251
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: 130MHz
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
- Base Part Number: 2SB1216
- detail: Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP