FQPF5N50CYDTU دیتاشیت

FQPF5N50CYDTU

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نام دیتاشیت FQPF5N50CYDTU
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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF5N50CYDTU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 38W
  • Total Gate Charge (Qg@Vgs): 24nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 625pF@25V
  • Continuous Drain Current (Id): 5A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,2.5A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
  • Base Part Number: FQPF5
  • detail: N-Channel 500V 5A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming)

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