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FQP3N50C-F080 Datasheet
Datasheet specifications
| Datasheet's name | FQP3N50C, FQPF3N50C |
|---|---|
| File size | 1000.17 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet FQP3N50C, FQPF3N50C |
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Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP3
- detail: N-Channel 500V 1.8A (Tc) 62W (Tc) Through Hole TO-220-3