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- دیتاشیت FQP6N60C
FQP6N60C دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQP6N60C |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FQP6N60C |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQP6N60C
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 125W
- Total Gate Charge (Qg@Vgs): 20nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 810pF@25V
- Continuous Drain Current (Id): 5.5A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,2.75A
- Package: TO-220
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FQP6
- detail: N-Channel 600V 6.2A (Tc) 130W (Tc) Through Hole TO-220-3