FQPF7N65CYDTU دیتاشیت

FQPF7N65CYDTU

مشخصات دیتاشیت

نام دیتاشیت FQPF7N65CYDTU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQPF7N65CYDTU-Isee

دانلود دیتاشیت

سایر مستندات

FQPF7N65C 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF7N65CYDTU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 52W
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 1245pF@25V
  • Continuous Drain Current (Id): 7A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@3.5A,10V
  • Package: -
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FQPF7
  • detail: N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F

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