FJI5603DTU دیتاشیت

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مشاهده دیتاشیت FJI5603DTU	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi FJI5603DTU
Transistor Type: NPN (Triple Diffused Planar Silicon Transistor)
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 3A
Power Dissipation (Pd): 100W
Transition Frequency (fT): 5MHz
DC Current Gain (hFE@Ic,Vce): 29@400mA,3V
Collector Cut-Off Current (Icbo): -
Collector-Emitter Breakdown Voltage (Vceo): 800V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@500mA,50mA
Package: TO-262
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Power - Max: 100W
Frequency - Transition: 5MHz
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Base Part Number: FJI560
detail: Bipolar (BJT) Transistor NPN 800V 3A 5MHz 100W Through Hole I2PAK (TO-262)