دیتاشیت FDA16N50-F109
مشخصات دیتاشیت
نام دیتاشیت | FDA16N50(_F109) |
---|---|
حجم فایل | 1709.225 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت FDA16N50(_F109) |
FDA16N50(_F109) Datasheet |
---|
مشخصات
- Manufacturer: ON Semiconductor
- Series: UniFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FDA16
- detail: N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN