دیتاشیت FCHD190N65S3R0-F155

FCHD190N65S3R0

مشخصات دیتاشیت

نام دیتاشیت FCHD190N65S3R0
حجم فایل 326.165 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FCHD190N65S3R0

FCHD190N65S3R0 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: SuperFET® III
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • Base Part Number: FCHD19
  • detail: N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-247

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