FGAF20N60SMD دیتاشیت

FGAF20N60SMD

مشخصات دیتاشیت

نام دیتاشیت FGAF20N60SMD
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مشاهده دیتاشیت FGAF20N60SMD

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مشخصات فنی

  • RoHS: true
  • Type: Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Operating Temperature: 55°C~+175°C@(Tj)
  • Collector Current (Ic): 40A
  • Power Dissipation (Pd): 75W
  • Turn?on Delay Time (Td(on)): 12ns
  • Total Gate Charge (Qg@Ic,Vge): 64nC
  • Turn?off Delay Time (Td(off)): 91ns
  • Pulsed Collector Current (Icm): 60A
  • Diode Reverse Recovery Time (Trr): 26.7ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.7V@15V,20A
  • Package: TO-3PF
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 75W
  • Switching Energy: 452µJ (on), 141µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 26.7ns
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
  • Base Part Number: FGAF2
  • detail: IGBT Field Stop 600V 40A 75W Through Hole TO-3PF

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