دیتاشیت NTNUS3171PZT5G
مشخصات دیتاشیت
| نام دیتاشیت |
NTNUS3171PZ
|
| حجم فایل |
110.436
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTNUS3171PZT5G
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Power Dissipation (Pd):
125mW
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Drain Source Voltage (Vdss):
20V
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Continuous Drain Current (Id):
150mA
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Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.5Ω@4.5V,100mA
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Package:
SOT1123
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
150mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
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Rds On (Max) @ Id, Vgs:
3.5Ohm @ 100mA, 4.5V
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Vgs(th) (Max) @ Id:
1V @ 250µA
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
13pF @ 15V
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FET Feature:
-
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Power Dissipation (Max):
125mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-1123
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Package / Case:
SOT-1123
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Base Part Number:
NTNUS3
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detail:
P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123
