FDPF5N60NZ دیتاشیت

FDPF5N60NZ

مشخصات دیتاشیت

نام دیتاشیت FDPF5N60NZ
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FDPF5N60NZ

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سایر مستندات

FDP(F)5N60NZ 12 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDPF5N60NZ
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 33W
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 600pF@25V
  • Continuous Drain Current (Id): 4.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,2.25A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: UniFET-II™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FDPF5
  • detail: N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F

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