NSV40301MZ4T1G دیتاشیت

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مشاهده دیتاشیت NSV40301MZ4T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSV40301MZ4T1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 3A
Power Dissipation (Pd): 800mW
Transition Frequency (fT): 215MHz
DC Current Gain (hFE@Ic,Vce): 200@1A,1V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 40V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@3A,300mA
Package: SOT-223-4
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Power - Max: 800mW
Frequency - Transition: 215MHz
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: NSV403
detail: Bipolar (BJT) Transistor NPN 40V 3A 215MHz 800mW Surface Mount SOT-223