دیتاشیت 2SC3649S-TD-E

مشخصات دیتاشیت

دانلود دیتاشیت 2SA1419/2SC3649	2SA1419/2SC3649 Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi 2SC3649S-TD-E
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 1.5A
Power Dissipation (Pd): 500mW
Transition Frequency (fT): 120MHz
DC Current Gain (hFE@Ic,Vce): 100@100mA,5V
Collector Cut-Off Current (Icbo): 1uA
Collector-Emitter Breakdown Voltage (Vceo): 160V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@500mA,50mA
Package: SOT-89
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Base Part Number: 2SC3649
detail: Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP