FJD5553TM دیتاشیت

FJD5553TM

مشخصات دیتاشیت

نام دیتاشیت FJD5553TM
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت FJD5553TM

دانلود دیتاشیت

سایر مستندات

FJD5553 6 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJD5553TM
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 1.25W
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 30@400mA,3V
  • Collector Cut-Off Current (Icbo): -
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 230mV@1A,200mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 3V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Base Part Number: FJD5553
  • detail: Bipolar (BJT) Transistor NPN 400V 3A 1.25W Surface Mount D-Pak

محصولات مشابه