ECH8668-TL-H دیتاشیت

ECH8668-TL-H

مشخصات دیتاشیت

نام دیتاشیت ECH8668-TL-H
حجم فایل 54.598 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت ECH8668-TL-H

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سایر مستندات

ECH8668 8 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi ECH8668-TL-H
  • Power Dissipation (Pd): 1.5W
  • Total Gate Charge (Qg@Vgs): 10.8nC@4.5V
  • Input Capacitance (Ciss@Vds): 1060pF@10V
  • Continuous Drain Current (Id): 7.5A;5A
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@4A,4.5V
  • Package: SOT-28FL
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A, 5A
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
  • Base Part Number: ECH8668
  • detail: Mosfet Array N and P-Channel 20V 7.5A, 5A 1.5W Surface Mount 8-ECH

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