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مشاهده دیتاشیت KSC3296YTU	دانلود دیتاشیت

KSC3296 5 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi KSC3296YTU
Transistor Type: NPN
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 1.5A
Power Dissipation (Pd): 20W
Transition Frequency (fT): 4MHz
DC Current Gain (hFE@Ic,Vce): 75@500mA,10V
Collector Cut-Off Current (Icbo): 10uA
Collector-Emitter Breakdown Voltage (Vceo): 150V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@500mA,50mA
Package: TO-220FM
Manufacturer: onsemi
Series: -
Packaging: Tube
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Power - Max: 20W
Frequency - Transition: 4MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Base Part Number: KSC3296
detail: Bipolar (BJT) Transistor NPN 150V 1.5A 4MHz 20W Through Hole TO-220F