FQB11P06TM دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQB11P06TM
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حجم فایل
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75.762
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQB11P06TM
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
53W
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Total Gate Charge (Qg@Vgs):
13nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
420pF@25V
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Continuous Drain Current (Id):
11.4A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250mA
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Reverse Transfer Capacitance (Crss@Vds):
45pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
140mΩ@10V,5.7A
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Package:
D2PAK
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
11.4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
175mOhm @ 5.7A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.13W (Ta), 53W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FQB1
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detail:
P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surface Mount D²PAK (TO-263AB)
