NTP5864NG دیتاشیت

NTP5864NG

مشخصات دیتاشیت

نام دیتاشیت NTP5864NG
حجم فایل 79.838 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت NTP5864NG

دانلود دیتاشیت

سایر مستندات

NTP5864N 6 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTP5864NG
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: NTP586
  • detail: N-Channel 60V 63A (Tc) 107W (Tc) Through Hole TO-220AB

محصولات مشابه