FGD3N60LSDTM دیتاشیت

FGD3N60LSDTM

مشخصات دیتاشیت

نام دیتاشیت FGD3N60LSDTM
حجم فایل 65.685 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت FGD3N60LSDTM

دانلود دیتاشیت

سایر مستندات

FGD3N60LSD 8 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGD3N60LSDTM
  • Operating Temperature: -
  • Collector Current (Ic): 6A
  • Power Dissipation (Pd): 40W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.25mJ
  • Pulsed Collector Current (Icm): 25A
  • Turn?off Switching Loss (Eoff): 1mJ
  • Diode Reverse Recovery Time (Trr): 234ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
  • Power - Max: 40W
  • Switching Energy: 250µJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 12.5nC
  • Td (on/off) @ 25°C: 40ns/600ns
  • Test Condition: 480V, 3A, 470Ohm, 10V
  • Reverse Recovery Time (trr): 234ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Base Part Number: FGD3
  • detail: IGBT 600V 6A 40W Surface Mount D-Pak

محصولات مشابه