FCD3400N80Z دیتاشیت

FCD3400N80Z

مشخصات دیتاشیت

نام دیتاشیت FCD3400N80Z
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCD3400N80Z

دانلود دیتاشیت

سایر مستندات

FCD3400N80Z, FCU3400N80Z 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCD3400N80Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 32W
  • Total Gate Charge (Qg@Vgs): 9.6nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 400pF@100V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@200uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4Ω@1A,10V
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: FCD34
  • detail: N-Channel 800V 2A (Tc) 32W (Tc) Surface Mount DPAK

محصولات مشابه